\pioaueti, 20 stern ave. springfield, new jersey 07081 u.s.a. complementary silicon plastic power transistors ... designed for use in general purpose power amplifier and switching applications. features: * collector-emitter sustaining voltage - vci??ia 45v(mln)- bd241 ,bd242 60v(min)- bd241a.BD242A 80v(mln)- bd241b.bd242b 100v(min)- bd241c.bd242c ? dc current gain hfe= 25(mn)eic- 1 ,oa * current gain-bandwidth product ft=3.0 mhz (min)q lc=500ma maximum ratings telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 characteristic collector-emitter voltage collector-base voltage emitter-base voltage collector current - continuous -peak base current total power di$sipattongtc= 25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo 'c 'a pd l.tsto bd241 bd242 45 55 bd241a BD242A so 70 bd241b bd242b 80 90 bd241c b0242c 100 115 5.0 3.0 5.0 1.0 40 0.32 -65 to +150 unit v v v a a w w/c c thermal characteristics ch araoteristic thermal resistance junction to case symbol rejc max 3.125 unit c/w figure-1 power derating 40 35 30 25 20 15 10 25 50 75 100 tc , temperaturefc) 125 150 npn pnp bd241 bd242 bd241a BD242A bd241b bd242b bd241c bd242c 3 ampere complementary silicon power transistors 45-100 volts 40 watts to-220 i- 1 2 3 r ?o l. r pin 1 base 2.cooector 3.emitter 4.collector(case) dim a b c d e f g h i j k l m o millimeters min 14.38 9.78 5.01 13.06 3.s7 2.42 1.12 0.72 422 1.14 2.20 0.33 2.48 3.70 max 15.31 10.42 652 14.62 4.07 3.66 1.36 0.96 4.96 1.33 2.97 0.66 2.96 3.90 nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information ramished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (t. = 25*c unless otherwise noted) isnwactensuc symbol mln max unit. off characteristics collector-emitter sustaining vottage(1) bd241 .bd242 ( lc= 30ma,lb= 0 ) bd241a.BD242A bd241b.bd242b bd241c.bd242c collector cutoff current (vce=30v,ib?0) bd241m2/41a/42a (v^ 60v, ib= 0 ) bd241 b/42b/41 c/42c collector cutoff currant (vm= 45v, vm= 0 ) bd241/42 (vc,= 60v,v_= 0 ) bd241a/42a (v..- 80v, v.," 0 ) bd241 b/42b (vci= 100v.v,.= 0 ) bd241c/42c emitter cutoff current (veb-sv.ic-o) w vceo(n?) 'ceo 'ces 'no 45 60 80 100 0.3 0.3 0.2 0.2 0.2 0.2 1.0 v ma ma ma on characteristics (1) dc current gain (vcj-4.ov.lc-1.oa) (vc, = 4.0v. ic?3.0a) collector-emitter saturation voltage (lc = 3.0a.ib=600ma) base-emitter on voltage (ic-3.0a.vc1=4.0v) hfe vc?, v?- 25 10 1.2 1.8 v v dynamic characteristics current gain-bandwidth prodct (2) {le?600 ma, vcflo v, t* 1 mhz) small-signal current gain (lc-500ma,vcg=10v,f=1 khz) it hfe 3.0 20 mhz (1) pulse test pulse width - 300 m? , duty cycle ^ 2.0% (2)ft
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